1,875 research outputs found
Interfacial Dirac Cones from Alternating Topological Invariant Superlattice Structures of Bi2Se3
When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.open282
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Impurities in a homogeneous electron gas
Immersion energies for an impurity in a homogeneous electron gas with a uniform positive background charge density have been calculated numerically using density functional theory. The numerical aspects of this problem are very demanding and have not been properly discussed in previous work. The numerical problems are related to approximations of infinity and continuity, and they have been corrected using physics based on the Friedel sum rule and Friedel oscillations. The numerical precision is tested extensively. Immersion energies are obtained for non-spin-polarized systems, and are compared with published data. Numerical results, such as phase shifts, density of states, dielectric constants, and compressibilities, are obtained and compared with analytical theories. Immersion energies for excited systems are obtained by varying the number of electrons in the bound states of an impurity. The model is extended to spin-polarized systems and is tested in detail for a carbon impurity. The spin-coupling with an external magnetic field is considered mainly for a hydrogen impurity. These new results show very interesting behavior at low densities
Multiple Dirac fermions from a topological insulator and graphene superlattice
Graphene and three-dimensional topological insulators are well-known Dirac materials whose bulk and surface states are governed by Dirac equations. They not only show good transport properties but also carry various quanta related to the geometrical phase such as charge, spin, and valley Hall conductances. Therefore, it is a great challenge to combine the two Dirac materials together, realizing multiple Dirac fermions. By using first-principles density-functional-theory calculations, we demonstrate such a system built from topological insulator-band insulator-graphene superlattice structures. Hexagonal boron nitride is proposed as an ideal band-insulating material in gluing graphene and topological insulators, providing a good substrate for graphene and a sharp interface with a topological insulator. The power factors for p-type doping are largely enhanced due to the charge-conducting channels through multiple Dirac cones. The systems characterized by the coexistence of the topologically protected interfacial and graphene Dirac cones can pave the way for developing integrated devices for electronics, spintronics and valleytronics applications.open5
New Candidates for Topological Insulators : Pb-based chalcogenide series
Here, we theoretically predict that the series of Pb-based layered
chalcogenides, PbBiSe and PbSbTe, are possible
new candidates for topological insulators. As increases, the phase
transition from a topological insulator to a band insulator is found to occur
between and 3 for both series. Significantly, among the new topological
insulators, we found a bulk band gap of 0.40eV in PbBiSe which is one
of the largest gap topological insulators, and that PbSbTe is
located in the immediate vicinity of the topological phase boundary, making its
topological phase easily tunable by changing external parameters such as
lattice constants. Due to the three-dimensional Dirac cone at the phase
boundary, massless Dirac fermions also may be easily accessible in
PbSbTe
Dirac cone engineering in Bi2Se3 thin films
In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications.open191
Anti-diabetic effect of Cyclo-His-Pro (CHP)-enriched yeast hydrolysate in streptozotocin-induced diabetic mice
The present study was designed to investigate the hypoglycemic effects of the daily oral dose of 0.50 to 0.75 g/kg of yeast hydrolysate (YH) containing high Cyclo-His-Pro (51.0 mg CHP/g YH) on normal and streptozotocin (STZ)-induced diabetic rats for 14 days. In STZ-induced diabetic rats, after administrations of the YH for 14 days, the body weight gain was significantly increased in dose dependent manner, and the plasma glucose levels were decreased approximately (60%) as compared to the STZ induced diabetic control group. Glucose level showed significant differences between the diabetic control (DC) and the YH administered groups in oral glucose tolerance test (OGTT) (P<0.05). Results of the OGTT showed a significant decrease in the area under curve (AUC) value of YH supplemented groups as compared to the DC group. The present data suggests that the CHP-enriched YH has potential anti-diabetic effect, which can help in the cure and management of diabetes.Keywords: Yeast hydrolysate, Cyclo-His-Pro (CHP), diabetes, streptozotocin.African Journal of Biotechnology Vol. 12(35), pp. 5473-547
Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature
Exciton resonances in monolayer transition-metal dichalcogenides (TMDs)
provide exceptionally strong light-matter interaction at room temperature.
Their spectral line shape is critical in the design of a myriad of
optoelectronic devices, ranging from solar cells to quantum information
processing. However, disorder resulting from static inhomogeneities and
dynamical fluctuations can significantly impact the line shape. Many recent
works experimentally evaluate the optical properties of TMD monolayers placed
on a substrate and the line shape is typically linked directly to the
material's quality. Here, we highlight that the interference of the substrate
and TMD reflections can strongly influence the line shape. We further show how
basic, room-temperature reflection measurement allow investigation of the
quantum mechanical exciton dynamics by systematically controlling the substrate
reflection with index-matching oils. By removing the substrate contribution
with a properly chosen oil, we can extract the excitonic decay rates including
the quantum mechanical dephasing rate. The results provide valuable guidance
for the engineering of exciton line shapes in layered nanophotonic systems
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